N-Channel RF Amplifier. This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching.
Type Designator: P13009
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 120 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO3PB
P13009 Transistor Equivalent Substitute - Cross-Reference Search
P13009 Datasheet (PDF)
1.1. sbp13009s.pdf Size:417K _update
SBP13009-S SBP13009-S SBP13009-S SBP13009-S High Voltage Fast-Switching NPN Power Transistor Features � Very High Switching Speed � High Voltage Capability � Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed Switching characteristics required such as lighting system,switching mode power supply. Absolute Maximum Ratings Symbol Para
1.2. sbp13009k.pdf Size:316K _update
SBP13009-K SBP13009-K SBP13009-K SBP13009-K HighVoltageFast-SwitchingNPNPowerTransistor Features ■ Very High Switching Speed ■ High Voltage Capability ■ Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed Switching characteristics required such as lighting system,switching mode power supply. Absolute Maximum Ratings Symbol Parameter
1.3. sbp13009o.pdf Size:334K _update
SBP13009-O SBP13009-O SBP13009-O SBP13009-O High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor Features Features Features Features ◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wide Reverse Bias SOA B B B B C C C C
1.4. fjp13009.pdf Size:181K _upd
March 2007 FJP13009 High Voltage Fast-Switching NPN Power Transistor • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Mode Power Supply TO-220 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* TC = 25°C unless otherwise noted (notes_1) Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter
1.5. wbp13009-k.pdf Size:328K _upd
WBP13009-K WBP13009-K WBP13009-K WBP13009-K High Voltage Fast- Switching NPN Power Transistor Features ■ Very High Switching Speed ■ High Voltage Capability ■ Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed Switching characteristics required such as lighting system,switching mode power supply. Absolute Maximum Ratings Symbol Par
1.6. fjp13009.pdf Size:123K _fairchild_semi
March 2007 FJP13009 High Voltage Fast-Switching NPN Power Transistor • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Mode Power Supply TO-220 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* TC = 25°C unless otherwise noted (notes_1) Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 40
1.7. p13009a.pdf Size:113K _jdsemi
R P13009A 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. ◆Si NPN ◆RoHS COMPLIANT 1. 1. 1.APPLICATION 1. Fluorescent Lamp、Electronic Ballast、 Computer Switch Power Supply 2. 2. 2.FE
1.8. p13009.pdf Size:115K _jdsemi
R P13009 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. ◆Si NPN ◆RoHS COMPLIANT 1. 1. 1.APPLICATION 1. Fluorescent Lamp、Electronic Ballast、 Computer Switch Power Supply 2. 2. 2.FEA
Datasheet: CJD204R, CJD3439, CJD81, CJD86, CJE13007, CJF100, CJF101, CJF102, TIP31C, CJF106, CJF107, CMBTA42, CMBTA44, CMBTA92, CN1016, CP1016, CP756.
LIST
Last Update
BJT: NP061A3 | KTC601UY | KSC5802D | FA1L3Z-L38 | FA1L3Z-L37 | FA1L3Z-L36 | EB102 | DC8550E | DC8550D | DC8550C | DC8550B | CHTA27XPT | CHT858BWPTS | CHT858BWPTR | CHT858BWPTQ | CHT857BTPTS | CHT857BTPTR | CHT857BTPTQ | CHT846BPTS | CHT846BPTR |
Type Designator: KTA1046
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 45 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO220IS
KTA1046 Transistor Equivalent Substitute - Cross-Reference Search
KTA1046 Datasheet (PDF)
1.1. kta1046.pdf Size:446K _kec
SEMICONDUCTOR KTA1046 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR INDUSTRIAL USE. GENERAL PURPOSE APPLICATION. A C DIM MILLIMETERS S FEATURES _ A 10.0 0.3 + _ + B 15.0 0.3 Low Collector Saturation Voltage E C _ 2.70 0.3 + D : VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. 0.76+0.09/-0.05 _ E Φ3.2 0.2 + Complementary to KTC2026. _ F 3.0 0.3 + _ 12.0 0.3 G + H 0.5+0
1.2. kta1046.pdf Size:1242K _kexin
DIP Type Transistors PNP Transistors KTA1046 Unit: mm TO-220F ±0.20 ±0.20 ±0.20 2.54 ±0.20 0.70 ■ Features ● Low saturation voltage and good linearity of hFE. ● Complementary to KTC2026 ±0.20 2.76 1.47max ±0.20 0.50 ±0.20 0.80 1. Base 2.54typ 2.54typ 2. Collector 3. Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector -
4.1. kta1042d l.pdf Size:395K _kec
SEMICONDUCTOR KTA1042D/L TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES A I C J Low Collector-Emitter Saturation Voltage DIM MILLIMETERS _ : VCE(sat)=-2.0V(Max.). A 6.60 + 0.2 _ B 6.10 + 0.2 _ C 5.0 + 0.2 Complementary to KTC2022D/L. _ D 1.10 + 0.2 _ E 2.70 + 0.2 _ F 2.30 + 0.1 H 1.00 MAX _ I 2.30 + 0.2 _ J 0.5 + 0.1 _ H K 2.00
4.2. kta1049.pdf Size:44K _kec
SEMICONDUCTOR KTA1049 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A C FEATURES DIM MILLIMETERS S Low Collector-Emitter Saturation Voltage _ A 10.0 + 0.3 _ + B 15.0 0.3 E : VCE(sat)=-2.0V(Max.). C _ 2.70 0.3 + D 0.76+0.09/-0.05 Complementary to KTC2028. _ E Φ3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + H 0.5+0.1/-0.05 _ + J 13.6 0.5 L
4.3. kta1040d l.pdf Size:335K _kec
SEMICONDUCTOR KTA1040D/L TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. DPAK FOR SURFACE MOUNT APPLICATIONS. A I C J FEATURES DIM MILLIMETERS _ A 6.60 + 0.2 Low Collector Saturation Voltage _ B 6.10 + 0.2 _ C 5.0 + 0.2 : VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. _ D 1.10 + 0.2 _ E 2.70 + 0.2 _ Straight Lead (IPAK, 'L' Suffix) F 2.30 + 0.
4.4. kta1045d l.pdf Size:399K _kec
SEMICONDUCTOR KTA1045D/L TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING APPLICATIONS A I C J FEATURES DIM MILLIMETERS _ A 6.60 + 0.2 _ B 6.10 + 0.2 High breakdown voltage VCEO 120V, high current 1A. _ C 5.0 + 0.2 _ D 1.10 + 0.2 Low saturation voltage and good linearity of hFE. _ E 2.70 + 0.2 _ F 2.30 + 0.1 H 1.00 MAX C
4.5. kta1049.pdf Size:1290K _kexin
DIP Type Transistors PNP Transistors KTA1049 Unit: mm TO-220F ±0.20 ±0.20 ±0.20 2.54 ±0.20 0.70 ■ Features ● Low collector saturation voltage ● Complementary to KTC2028 ±0.20 2.76 1.47max ±0.20 0.50 ±0.20 0.80 1. Base 2.54typ 2. Collector 2.54typ 3. Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage V
Datasheet: BC817A, KN2222A, KTA1040D, KTA1040L, KTA1042D, KTA1042L, KTA1045D, KTA1045L, BC550, KTA1049, KTA1073T, KTA1225D, KTA1225L, KTA1242D, KTA1242L, KTA1243, KTA1279.
LIST
Last Update
BJT: NP061A3 | KTC601UY | KSC5802D | FA1L3Z-L38 | FA1L3Z-L37 | FA1L3Z-L36 | EB102 | DC8550E | DC8550D | DC8550C | DC8550B | CHTA27XPT | CHT858BWPTS | CHT858BWPTR | CHT858BWPTQ | CHT857BTPTS | CHT857BTPTR | CHT857BTPTQ | CHT846BPTS | CHT846BPTR |